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Data Sheet, Rev. 2.4, Jul 2010
TLE7185-1E
3-Phase Bridge Driver IC
Automotive Power
TLE7185-1E
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 2 3 3.1 3.2 4 4.1 4.2 4.3 4.4 5 5.1 5.1.1 5.1.2 5.1.3 5.1.4 5.2 5.2.1 5.2.2 5.2.3 5.2.4 5.2.5 5.2.6 5.2.7 5.2.8 5.2.9 6 7 8 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Assignment TLE7185-1E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Default State of Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOSFET Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operation at Vs<12V - Integrated Charge Pump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Sleep Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection and Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Dead Time and Shoot Through Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Shoot Through Option . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Under Voltage Lock Out on Vs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Under Voltage warning on CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Over Voltage Warning on Vs and / or VDH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Over Temperature Warning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ERR Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 7 8 9 9
10 10 10 10 11 11 14 14 14 15 15 15 15 15 15 17
Application Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Data Sheet
2
Rev. 2.4, 2010-07-16
3-Phase Bridge Driver IC
TLE7185-1E
1
Features * * * * * * * * * * * * * * * *
Overview
Drives 6 N-Channel Power MOSFETs Separate control input for each MOSFET Separate Source pin for each MOSFET Integrated charge pump for operation at low battery voltages Adjustable dead time Shoot through protection and Shoot through option Analog adjustable Short Circuit Protection levels Low quiescent current mode 2 bit diagnosis / ERRx Over temperature warning Over voltage warning Under voltage warning Under voltage lockout 0 ...95% Duty cycle of High Side MOSFETs Green Product (RoHS compliant) AEC Qualified
PG-DSO-36-38
Description The TLE7185-1E is a driver IC dedicated to control the 6 to 12 external MOSFETs forming the converter for high current 3 phase motor drives in the automotive sector. It incorporates features like short circuit detection, diagnosis and combines it with typical automotive specific requirements. The TLE7185-1E is especially designed for low battery voltage and therefore it is specified down to 5.5V supply voltage. Typical applications are cooling fan, water pump, electro-hydraulic and electric power steering. The TLE7185-1E is designed for 12V power net.
Type TLE7185-1E Data Sheet
Package PG-DSO-36-38 3
Marking TLE7185-1E Rev. 2.4, 2010-07-16
TLE7185-1E
Block Diagram
2
Block Diagram
VS ___ INH GND CL CH CB VDH
Regulated charge pump Under voltage warning Under voltage lockout BH1 Floating HS driver Short circuit detection GH1 SH1 ____ ERR1 ____ ERR2 ENA SCDL
Diagnostic logic Under voltage Over voltage Short circuit Reset
Floating LS driver Short circuit detection
GL1 SL1
L E V E L S H I F T E R
BH2 Floating HS driver Short circuit detection GH2 SH2
STOE DT IL1 ___ IH1 IL2 ___ IH2 IL3 ___ IH3
Floating LS driver Short circuit detection
GL2 SL2 BH3
Input control Shoot through protection / enable dead time
Floating HS driver Short circuit detection
GH3 SH3
Floating LS driver Short circuit detection over temperature
GL3 SL3 GND
GND
Figure 1 Data Sheet
Block Diagram 4 Rev. 2.4, 2010-07-16
TLE7185-1E
Pin Configuration
3
3.1
Pin Configuration
Pin Assignment TLE7185-1E
STOE ERR2 ERR1 ENA IH1 IL1 IH2 IL2 IH3 IL3 DT INH CL CH VS GND CB GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19
SCDL GND VDH BH1 GH1 SH1 GL1 SL1 BH2 GH2 SH2 GL2 SL2 BH3 GH3 SH3 GL3 SL3
Figure 2
Pin Configuration
Data Sheet
5
Rev. 2.4, 2010-07-16
TLE7185-1E
Pin Configuration
3.2
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
Pin Definitions and Functions
Symbol STOE ERR2 ERR1 ENA IH1 IL1 IH2 IL2 IH3 IL3 DT INH CL CH VS GND CB GND SL3 GL3 SH3 GH3 BH3 SL2 GL2 SH2 GH2 BH2 SL1 GL1 SH1 GH1 BH1 VDH GND SCDL Input pin for adjustable Short Circuit Detection function, connect to GND via resistor Should be connected to GND Pin for source connection of high side MOSFET 3 Output pin for gate of low side MOSFET 3 Pin for source connection of high side MOSFET 3 Output pin for gate of high side MOSFET 3 Pin for + terminal of the bootstrap capacitor of phase 3 Pin for source connection of high side MOSFET 2 Output pin for gate of low side MOSFET 2 Pin for source connection of high side MOSFET 2 Output pin for gate of high side MOSFET 2 Pin for + terminal of the bootstrap capacitor of phase 2 Pin for source connection of high side MOSFET 1 Output pin for gate of low side MOSFET 1 Pin for source connection of high side MOSFET 1 Output pin for gate of high side MOSFET 1 Pin for + terminal of the bootstrap capacitor of phase 1 Voltage input common drain high side for short circuit detection Output of charge pump; connect to buffer capacitor Function Input pin to enable shoot through option in all 3 half bridges (active high) Open drain error output 2 Open drain error output 1 Input pin for reset of ERRx registers + active switch off of external MOSFETs, set HIGH to enable operation Input for high side switch 1 (active low) Input for low side switch 1 (active high) Input for high side switch 2 (active low) Input for low side switch 2 (active high) Input for high side switch 3 (active low) Input for low side switch 3 (active high) Input pin for adjustable dead time function, connect to GND via resistor Input pin to activate (high) / deactivate (low) the complete Driver IC Charge pump capacitor - terminal Charge pump capacitor + terminal Supply Pin
Cooling GND Tab
All GND pins and Cooling Tab should be interconnected. Data Sheet 6 Rev. 2.4, 2010-07-16
TLE7185-1E
General Product Characteristics
4
4.1
General Product Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings 1) 40 C Tj 150 C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Voltages 4.1.1 4.1.2 4.1.3 4.1.4 4.1.5 4.1.6 4.1.7 4.1.8 4.1.9 4.1.10 4.1.11 4.1.12 4.1.13 4.1.14 4.1.15 4.1.16 4.1.17 4.1.18 4.1.19 4.1.20 4.1.21 4.1.22 4.1.23 4.1.24 4.1.25 4.1.26 4.1.27 Supply voltage Supply voltage Supply voltage Voltage range at VDH Voltage range at VDH Voltage range at IHx, ILx, ENA, INH, STOE Voltage range at ERRx Voltage range at SCDL Voltage range at DT Voltage range at BHx Voltage range at GHx Voltage range at GHx Voltage range at SHx Voltage range at SHx Voltage range at GLx Voltage range at GLx Voltage range at SLx Voltage range at SLx Voltage difference Gxx-Sxx Voltage difference BHx-SHx Minimum bootstrap capacitor CBS Voltage range at CL Voltage range at CH, CB Voltage difference CH-CL Junction temperature Storage temperature Power Dissipation (DC) @ TCASE=135C
VS VSR1 VSR2 VVDH VVDHR1 VDP VERR VSCDL VDT VBH VGH VGHP VSH VSHP VGL VGLP VSL VSLP VGS VBS CBS VCL VCHB VCHL Tj Tstg Ptot
Parameter
Symbol
Limit Values Min. -0.3 -1.0 -4.0 -0.3 -4.0 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -7.0 -2.6 -7.0 -1.0 -7.0 -1.0 -7.0 -0.3 -0.3 330 -0.3 -0.3 -0.3 -40 -55 - Max. 45 45 45 55 55 18 18 18 6 55 55 55 45 45 18 18 5.0 7.0 15 15 - 25 25 25 150 150 3
Unit
Conditions
V V V V V V V V V V V V V V V V V V V V nF V V V C C W
- t < 60s, 5x RVS 4.7;; 500ms, 5x - RVDH 10; 500ms, 5x - RERR 5k RSCDL 10k - - - t<1s / f=50kHz - t<1s / f=50kHz - t<0.5s /f=50kHz - t<0.5s /f=50kHz - - - - - - - - -
Temperatures
Power Dissipation
ESD Susceptibility Data Sheet 7 Rev. 2.4, 2010-07-16
TLE7185-1E
General Product Characteristics Absolute Maximum Ratings (cont'd)1) 40 C Tj 150 C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. 4.1.28 4.1.29 Parameter ESD Resistivity CDM
3) 2)
Symbol
VESD VCDM
Limit Values Min. -2 -500 Max. 2 500
Unit kV V
Conditions - -
1) Not subject to production test, specified by design. 2) ESD susceptibility HBM according to EIA/JESD 22-A 114B 3) ESD susceptibility, Charged Device Model "CDM" EIA/JESD22-C101 or ESDA STM5.3.1
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.
4.2
Pos. 4.2.1 4.2.2 4.2.3 4.2.4 4.2.5 4.2.6 4.2.7
Functional Range
Parameter Supply voltage
1) 2)
Symbol Min.
Limit Values Max. 32 22 20 80 45 95 100 5.5 - - - - 0 0
Unit V A mA mA mA % %
Conditions -
Quiescent current
VS IQ IVs(0) IVs(1) IVs(2) DHS DLS CCP CCB
VS,VDH<15V; INH=Low; Tj<85C
- 6xQGxfPWM30mA; Vs=5.5..16V; 6xQGxfPWM30mA; Vs=16..32V; fPWM=20kHz; continuous operation; CBSx330nF - -
Supply current at Vs (device disabled) Supply current at Vs (device enabled) Supply current at Vs (device enabled) Duty cycle HS Duty cycle LS
4.2.8 4.2.9
Charge pump capacitor Buffer capacitor
1.0 1.0
4.7 4.7
F F
1) For wake up of driver min. 6.5V Vs are required 2) total current consumption from power net (Vs and VDH)
The limitations in the PWM frequency are given by thermal constraints and limitations in the duty cycle (charging time of bootstrap capacitor). Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table.
Data Sheet
8
Rev. 2.4, 2010-07-16
TLE7185-1E
General Product Characteristics
4.3
Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org. Pos. 4.3.1 4.3.2 Parameter Junction to Case
1) 1)
Symbol Min.
Limit Values Typ. Max. 5 - - -
Unit K/W K/W
Conditions -
2)
RthJC RthJA
-
29
Junction to Ambient
1) Not subject to production test, specified by design. 2) Exposed Heatslug Package use this sentence: Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70m Cu, 2 x 35m Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer.
4.4
Table 1
Default State of Inputs
Default State of Inputs (if left open) State Low High Low Low Low Remark Low side MOSFETs off High side MOSFETs off Device outputs disabled Sleep mode, IQ < 22 A Shoot through option is disabled
Characteristic Default state of ILx Default state of IHx Default state of ENA Default state of INH Default state of STOE
Note: To activate the driver both INH and ENA must be pulled high. To allow shoot through all ILx pins must be pulled high, all IHx must be pulled low and STOE must be pulled high
Data Sheet
9
Rev. 2.4, 2010-07-16
TLE7185-1E
Description and Electrical Characteristics
5
5.1 5.1.1
Description and Electrical Characteristics
MOSFET Driver Output Stages
The 3 low side and 3 high side powerful push-pull output stages of the TLE7185-1E are all floating blocks, each with its own source pin. This allows the direct connection of the output stage to the source of each single MOSFET, allowing a perfect control of each gate-source voltage even when 200A are driven in the bridge with rise and fall times below 1s. All 6 output stages have the same output power and thanks to the used bootstrap principle they can be switched all up to 30kHz. To ensure high gate voltages even at low battery voltages, the driver IC has an integrated charge pump. It allows operation of normal level MOSFETs down to 5.5V supply. Each output stage has its own short circuit detection block. For more details about short circuit detection see Chapter 5.2.1.1)
VS
INH
CL CH
CB
BHx
VDH BHx
Charge pump
CB
_____ ERR1 _____ ERR2 ENA
Error logic Reset Power On Reset Under voltage warning CB Under voltage lock out Vs Over voltage warning Vs & VDH Over temperature warning Short circuit
+
VDH
V SCP Level shifter
GHx
SHx
Floating HS driver 3x
SCD
SCD
SCD STOE lock / unlock
CB1
___ IH1 IL1 ___ IH2 IL2 ___ IH3 IL3 DT STOE
short circuit filter Input Logic Shoot Through Protection Dead Time Shoot Through Option
ON / OFF
Short Circuit Detection Level + V SCP
GLx
ON / OFF
Level shifter Floating LS driver 3x
SLx
GND
SCDL
Figure 3
Block Diagram of Driver Stages including Short Circuit Detection
5.1.2
Operation at Vs<12V - Integrated Charge Pump
The TLE7185-1E provides a feature tailored to the requirements in 12V automotive applications. Often the operation of an application has to be assured even at 9V supply voltage or lower. Normally bridge driver ICs
1) The high side outputs are not designed to be used for low side MOSFETs; the low side outputs are not designed to be used for high side MOSFETs
Data Sheet
10
Rev. 2.4, 2010-07-16
TLE7185-1E
Description and Electrical Characteristics provide in such conditions clearly less than 9V to the gate of the external MOSFETs, increasing their RDSon and the associated power dissipation. The TLE7185-1E has a charge pump circuitry for external capacitors. The operation of the charge pump is independent upon the pulse pattern of the MOSFETs. The output of the charge pump is regulated to about 12V. The output of the charge pump supplies the output stages for the low side MOSFETs with sufficient voltage to assure 10V at the MOSFETs gate even if the supply voltage is below 10V. It supplies as well the bootstrap circuitry for the high side output stages. Off course the bootstrap principle leads to the fact that the bootstrap capacitors needs to be charged regularly. The charging time for the bootstrap capacitor is specified (duty cycle HS) as well as the current consumption from the bootstrap capacitor in permanent "on" condition. The charge pump is only deactivated when the device is put into sleep mode via INH. During Start Up of the device it is not allowed to have any PWM patterns at the ILx and IHx pins until the charge pumps have ramped up to their final values or it is recommended to keep the ENA pin low. The size of the charge pump capacitor (pump capacitors CCP as well as buffer capacitor CCB) can be varied between 1 F and 4.7 F. Yet, larger capacitor values result in higher charge pump voltages and less voltage ripple on the charge pump buffer capacitor CB. Besides the capacitance values the ESR of the buffer capacitor CB determines the voltage ripple as well. It is recommended to use buffer capacitor CB that has small ESR. Please. see also Chapter 5.1.3 for capacitor selection.
5.1.3
Sleep Mode
When the INH pin is set to low, the driver will be set to sleep mode. The INH pin switches off the complete supply structure of the device and leads finally to an under voltage shut down of the complete driver. Enabling the device with the INH pin means to switch on the supply structure. The device will run through power on reset during wake up. It is recommended to perform a Reset by ENA after Wake up to remove possible ERR signals; Reset is performed by keeping one or more ENA pins low until the charge pump voltages have ramped up. Enabling and disabling with the INH pin is not very fast. For fast enable / disable the ENA pin is recommended. When the TLE7185-1E is in INH mode (INH is low) or when the supply voltage is not available on the Vs pin, then the driver IC is not supplied, the charge pump is inactive and the charge pump buffer capacitor as well as the bootstrap capacitors are discharged.
5.1.4
Electrical Characteristics
Electrical Characteristics MOSFET drivers
VS = 5.5 to 32V, Tj = -40 to +150C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified) Pos. Inputs 5.1.1 5.1.2 5.1.3 5.1.4 Low level input voltage of ILx; IHx; VI_LL ENA; STOE High level input voltage of ILx; IHx; VI_HL ENA; STOE Input hysteresis of IHx; ILx; ENA; STOE IHx pull up resistors
dVI RIH
Parameter
Symbol Min. - 2.0 100 20 11
Limit Values Typ. - - - - Max. 1.0 - - 45
Unit
Conditions
V V mV k
- - - pulled to 5V Rev. 2.4, 2010-07-16
Data Sheet
TLE7185-1E
Description and Electrical Characteristics Electrical Characteristics MOSFET drivers
VS = 5.5 to 32V, Tj = -40 to +150C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified) Pos. 5.1.5 5.1.6 5.1.7 5.1.8 5.1.9 5.1.10 5.1.11 5.1.12 5.1.13 5.1.14 Parameter Symbol Min. ILx; ENA; STOE pull down resistors RIL INH pull down resistor Low level input voltage of INH High level input voltage of INH Charge pump output voltage Charge pump frequency Output source resistance Output sink resistance High level output voltage High level output voltage 20 30 - 2.5 11 38 - - - 9 Limit Values Typ. - - - - - 55 - - - 10 Max. 45 75 0.75 - 13.5 72 13.5 9.0 13.5 - k k V V V kHz V V - - - - Unit Conditions
RIL_INH VINHL VINHH VCB fCP RSou RSink VGxx VGxx
Charge pump
Vs=7..32V; 6xQGxfPWM30mA
- - -
MOSFET driver output
VS<32V,
6xQGxfPWM30mA
Vs=7V, 6xQGxfPWM30mA, D.C.=94%; fPWM=20kHz
INH=low or UVLO1) INH=low or UVLO INH=low or UVLO
5.1.15 5.1.16 5.1.17 5.1.18 5.1.19
High level output voltage Pull down resistor at BHx to GND Pull down resistor at CB to GND Bias current into BHx Bias current out of SHx
VGUV RINH RCBUV IBH ISH
- 30 10 - -
- - - - 40
1.2 80 30 120 -
V k k A A
VBSx>5V;
no switching INH=ENA=high; IHx =high; VBSx=5V..13.0V 0VVSHVS+1V; no switching; VBSx5V RDT=0 RDT=10 k RDT=47 k RDT=100 k RDT=1000 k DT pin open
5.1.20
Bias current out of SLx
ISL
-
-
1
mA
5.1.21
Programmable internal dead time
tDT
0.08 0.25 0.62 1.0 2.0 2.3 0 0 0 0 -
0.14 0.41 1.05 1.85 3.82 - - - - - -
0.20 0.57 1.45 2.7 5.6 6.4 200 200 200 200 100
s
5.1.22 5.1.23 5.1.24 5.1.25 5.1.26 5.1.27
Max. internal dead time Input propagation time (low on) Input propagation time (low off) Input propagation time (high on) Input propagation time (high off) Absolute input propagation time difference between above propagation times
tDT_MAX
s ns ns ns ns ns
tP(ILN) tP(ILF) tP(IHN) tP(IHF) tP(an)
CLoad=11nF; RLoad=1
Data Sheet
12
Rev. 2.4, 2010-07-16
TLE7185-1E
Description and Electrical Characteristics Electrical Characteristics MOSFET drivers
VS = 5.5 to 32V, Tj = -40 to +150C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified) Pos. Parameter Symbol Min. Wake up / Inhibit 5.1.28 5.1.29 INH propagation time to disable the tINH_Pdis output stages Wake up time; INH low to high - - - - 10 20 s ms - Limit Values Typ. Max. Unit Conditions
tINH_Pen1
Vs=6.5..8V Driver fully functional; ENA=low; CCB=4.7F Vs=8..32V Driver fully functional; ENA=low; CCB=4.7F
5.1.30
Wake up time; INH low to high
tINH_Pen2
-
-
10
ms
1) Not subjected to production test; specified by design
Data Sheet
13
Rev. 2.4, 2010-07-16
TLE7185-1E
5.2 5.2.1
Protection and Diagnostic Functions Short Circuit Protection
The TLE7185-1E provides a short circuit protection for the external MOSFETs. It is a monitoring of the drainsource voltage of the external MOSFETs. As soon as this voltage is higher than the short circuit detection level, a timer will start to run. The short circuit detection level is programmable from outside by applying a voltage divider at the SCDL pin. The applied voltage at this pin will be used as short circuit detection level up to the specified maximum level. Above this level the short circuit detection is deactivated. After a delay tSCP all external MOSFETs will be switched off until the driver is reset by the ENA pin. The error flag is set. The drain-source voltage monitoring of the short circuit detection for a certain external MOSFET is active as soon as the corresponding input is set to "on" and the dead time is expired. For safety reasons a pull up resistor at the SCDL pin assures that in case of an open pin the SCDL voltage is pulled to high levels. In this case, the SCD is deactivated an error signal is set. This function is self clearing when the voltage at SCDL returns to the specified level. The short circuit detection filter is realized with a capacitor, which is discharged with a current source with X A. In case the output stage is switched on and the VDS of the MOSFET is still above SCDL, the capacitor is charged with a current source with Y A. If this capacitor is charged to a specific voltage level, the short circuit is detected, the ERR signals are set and the MOSFETs switched off. The SCD charge and discharge ratio is defined as (Y-X)/X. This ratio defines down to which duty cycle the short circuit can be detected. It has to be considered that the high side and the low side output of one phase are working with the same capacitor, defining the maximum switching time, which is allowed without short circuit detection. This maximum allowed switching time in normal operation is defined by dnoSCD/2*fPWM. This behavior is specified as "maximum duty cycle for no short circuit detection" and "minimum duty cycle for periodic short circuit detection"
5.2.2
Dead Time and Shoot Through Protection
In bridge applications it has to be assured that the external high side and low side MOSFETs are not "on" at the same time, connecting directly the battery voltage to GND. The dead time generated in the TLE7185-1E is fixed to a minimum value if the DT pin is connected to GND. This function assures a minimum dead time if the input signals coming from the C are faulty. The dead time can be increased beyond the internal fixed dead time by connecting the DT pin via a dead time resistor RDT to GND - the larger the dead time resistor the larger the dead time (for details pls. see the "Dynamic Characteristic" table in the MOSFET driver section). The exact dead time of the bridge is usually controlled by the PWM generation unit of the C. In addition to this dead time, the TLE7185-1E provides a locking mechanism, avoiding that both external MOSFETs of one half bridge can be switched on at the same time. This functionality is called shoot through protection. If the command to switch on both high and low side switches in the same half bridge is given at the input pins, the command will be ignored.
Data Sheet
14
Rev. 2.4, 2010-07-16
TLE7185-1E
5.2.3
Shoot Through Option
The TLE7185-1E offers the possibility to switch off the Shoot Through Protection by setting the STOE pin to high and in the same time all IHX to low and all ILX to high. Only if all 7 conditions are fulfilled in the same time, the Shoot Through Protection and the Short Circuit Detection is deactivated and allows to switch on all 6 external MOSFETs. If STOE is set to high, an error signal is set.
5.2.4
Under Voltage Lock Out on Vs
The TLE7185-1E has an integrated under voltage lock out, to assure that the behavior of the device is predictable in all supply voltage ranges. If the supply voltage at VS reaches the under voltage lock out level for a minimum specified filter time, the gatesource voltage of all external MOSFETs will be actively pulled to low. In this situation the short circuit detection of this output stage is deactivated to avoid a latching shut down of the driver. Furthermore, the charge pump will be deactivated. As soon as the supply voltage recovers, the output stage condition will be aligned to the input patterns automatically. This allows to continue operation of the motor in case of under voltage shut down without a reset by the C.
5.2.5
Under Voltage warning on CB
In addition to the under voltage lockout, the TLE7185-1E provides an integrated under voltage warning. The purpose of this warning is to inform the user about possible low gate voltages. If the voltage of a charge pump buffer capacitor CB reaches the under voltage warning level for a minimum specified filter time, an Errors signal is set. As soon as the charge pump buffer voltage recovers, the Error signal will be removed automatically.
5.2.6
Over Voltage Warning on Vs and / or VDH
The TLE7185-1E has an integrated over voltage warning to avoid destruction of the IC at high supply voltages. The voltage is observed at the VS and the VDH pin. When one of them or all of them exceed the over voltage warning level for more than the specified filter time an Error signal is set. It is in the responsibility of the user to react to this signal to avoid damage of the driver by exceeding the max ratings. The Errors signal is self clearing. The basic driver functions will work even above this over voltage warning level as long as no maximum rating is violated. At such high voltages, the specified values will not be guaranteed.
5.2.7
Over Temperature Warning
If the junction temperature is exceeding the over temperature level an error signal is given as warning. The driver IC will continue to operate in order not to disturb the application. The warning is removed automatically when the junction temperature is cooling down. It is in the responsibility of the user to protect the device against over temperature destruction.
5.2.8
ERR Pins
The TLE7185-1E has two status pins to provide diagnostic feedback to the C. The outputs of these pins are open drain outputs with integrated pull up resistors to the internal 5V supply (see Figure 4 ). The outputs are either high or low.
Data Sheet
15
Rev. 2.4, 2010-07-16
TLE7185-1E
5V
TLE7185E internal
____ ERR
ERR - Logic
GND
Figure 4 Table 2 ERR1 High High Low Low
Structure of ERR output Overview of error conditions ERR2 High Low High High Driver conditions no errors Over temperature Driver action Fully functional Warning only Restart - Self clearing Self clearing Self clearing
Over voltage VS/VDH or Warning only under voltage CB Under voltage lockout based on Vs STOE pin High SCDL open pin Short circuit detection Deactivation of driver output and charge pump Warning only Warning only; SCD deactivated;
Low Low Low
Low Low Low
Self clearing Self clearing
All MOSFETs actively Reset at ENA needed switched off
Reset of ERROR Registers and Disable The TLE7185-1E can be reseted by the enable pin ENA. If the ENA pin is pulled to low for a specified minimum time, the error registers are cleared. During reset (ENA = low) the driver outputs are disabled and the external MOSFETs are switched off actively. Furthermore, the Short Circuit Detection SCD is deactivated as long as ENA = low. During disable (ENA = low) any error is shown. However, the Short circuit detection error is reset (error is cleared) and can not reoccur as the output stages which drive the external MOSFETs are disabled. In case of under voltage lockout, the ERR pins deviate from the table above as the charge pump is not active and the TLE7185E is not biased properly.
Data Sheet
16
Rev. 2.4, 2010-07-16
TLE7185-1E
5.2.9
Electrical Characteristics
Electrical Characteristics - Protection and diagnostic functions
VS = 5.5 to 32V, Tj = -40 to +150C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Min. ERR pins 5.2.1 5.2.2 ERRx output (open drain) Fall time ERRx (80 - 20 %) Limit Values Typ. - - Max. 0.6 1 V s I=100A Unit Conditions
VERR tf(ERR)
- -
CLOAD=100pF;
VS=7V; RLoad=100k
5.2.3 5.2.4 5.2.5
Internal pull up resistor ERRx Over temperature warning Hysteresis for over temperature warning Short circuit protection detection level Short circuit protection detection Accuracy Short circuit protection detection Accuracy
Rf(ERR) Tj(OW) dTj(OW)
15 160 10
22 170 -
35 180 20
k C C
pulled to 5V - -
Over temperature
Short circuit protection 5.2.6 5.2.7 5.2.8 5.2.9 5.2.10 5.2.11 5.2.12 5.2.13 5.2.14 5.2.15
VSCP ASCP ASCP
0.3 -30 -10 5 - 28 80 2.0 1
- - - - - - 140 - - 0.3
2 +30 +10 12 12 - 200 2.5 3
V % % s % % k V s V
programmed by SCDL pin 0.3VVSCDL<1.2V 1.2VVSCDL2.0V - static short circuit applied; only one input switched (IHx or ILx), fPWM=40kHz pulled to 5V - - -
Filter time of short circuit protection tSCP(off) Maximum duty cycle for no periodic dnoSCD short circuit detection Minimum duty cycle for periodic short circuit detection Internal pull up resistor SCDL SCDL open pin detection level Filter time of SCDL open pin SCDL open pin detection level hysteresis Over voltage warning at Vs and/or VDH Over voltage warning filter time Over voltage warning hysteresis Under voltage lockout at Vs Under voltage lockout filter time Under voltage lockout hysteresis Under voltage warning at CB Under voltage warning filter time Under voltage warning hysteresis
dpSCD RSCDL VSCPOP tSCPOP VSCOPH
Over- and under voltage 5.2.16 5.2.17 5.2.18 5.2.19 5.2.20 5.2.21 5.2.22 5.2.23 5.2.24
VOV tOV VH_OV VUVLO tUVLO VUVLOH VUV tUV VUVH
32 10 2 - 1 - 9.5 10 - 17
- - - - - 0.25 - - 0.25
35 25 4 5.5 4 - 10.5 20 -
V s V V s V V s V
Vs and/or VVDH
increasing - -
Vs decreasing
- -
VCB decreasing
- - Rev. 2.4, 2010-07-16
Data Sheet
TLE7185-1E
Electrical Characteristics - Protection and diagnostic functions (cont'd)
VS = 5.5 to 32V, Tj = -40 to +150C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified) Pos. Parameter Symbol Min. Reset and Enable 5.2.25 5.2.26 5.2.27 5.2.28 Reset time to clear ERR registers Low time of ENA signal without reset ENA propagation time Limit Values Typ. - - - - Max. - 0.5 1.5 1.0 s s s s - - high to low - Unit Conditions
tRes1 tRes0
3.0 - - -
tPENA_H-L Return time to normal operation at tAR
auto-restart
Data Sheet
18
Rev. 2.4, 2010-07-16
TLE7185-1E
Application Description
6
Application Description
In the automotive sector there are more and more applications requiring high performance motor drives, such as electro-hydraulic or electric power steering. In these applications 3 phase motors, synchronous and asynchronous, are used, combining high output performance, low space requirements and high reliability.
KL 15 VBAT R INH1 R VS 4.7
C BR 4,7mF PGND RVDH
CBR 1F PGND
R INH2
C VS 2.2F
INH CB CCB 2.2uF
VS
VDH BH1 GH1 CBS1 470nF
GND CL CCP 1uF CH
SH1 BH2 GH2 SH2 BH3
R GH1 CBS2 470nF
R GH2 CBS3 470nF
RERR1 5k ERR2
GH3 SH3 RGH3
C or digital ASIC: e.g.: XC23xx
RERR2 5k ERR1
TLE7185E
STOE ENA IL1 IH1 IL2 IH2 IL3 IH3 5V RSCDL1 SCDL RSCDL2 DT
GL1 RGL1 SL1
GL2 RGL2 SL2
GL3 R GL3 SL3
GND
R DT
GND
GND
GND
PGND
Figure 5
Application Circuit
Note: This is a very simplified example of an application circuit. The function must be verified in the real application. Data Sheet 19 Rev. 2.4, 2010-07-16
TLE7185-1E
Package Outlines
7
Package Outlines
0...0.10 STAND OFF 2.45 -0.2 2.65 MAX.
0.35 x 45
0.65 C 17 x 0.65 = 11.05 0.33 0.08 2) 0.1 C 36x SEATING PLANE
1.1
0.7 0.2 10.3 0.3 D
0.17 M A-B C D 36x A
19
Bottom View
19 36
36
4.6
Exposed Diepad
1
18
18
B 12.8 -0.21) Index Marking
5.2
1
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion of 0.05 max. per side
P-PG-DSO-36-38 V07
Figure 6
PG-DSO-36-38
Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
You can find all of our packages, sorts of packing and others in our Infineon Internet Page "Products": http://www.infineon.com/products. Data Sheet 20
8 MAX.
Dimensions in mm Rev. 2.4, 2010-07-16
7.6 -0.2 1)
0.23 +0.09
2010-07-16 TLE7185-1E
Revision History
8
Version Rev. 2.4 Rev. 2.3 Rev. 2.2 Rev. 2.1
Revision History
Date 2010-07-16 2009-08-18 2009-01-13 2008-10-08 Changes Change of Name and Marking Parameter Chapter 5.1.8 High level input voltage INH minimum value to 2.5V chapter 7: package outline updated (Stand-off reduced)
parameter 5.1.20 RSHSL deleted
Data Sheet
21
Rev. 2.4, 2010-07-16
TLE7185-1E
Revision History
Data Sheet
22
Rev. 2.4, 2010-07-16
Edition 2010-07-16 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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